Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 200 @1mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-563 |
|
Dimensions/Packaging: | SOT-563 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBC114YDXV6T1G
|
ON Semiconductor | 功能相似 | SOT-563-6 |
双NPN偏置电阻晶体管 Dual NPN Bias Resistor Transistors
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review