Technical parameters/dissipated power: | 300 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @10mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-666-6 |
|
Dimensions/Length: | 1.7 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.6 mm |
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Dimensions/Packaging: | SOT-666-6 |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBC114YDXV6T1G
|
ON Semiconductor | 功能相似 | SOT-563-6 |
双NPN偏置电阻晶体管 Dual NPN Bias Resistor Transistors
|
||
PEMD9,115
|
Nexperia | 类似代替 | SOT-666-6 |
PEMD9 系列 50 V 100 mA NPN/PNP 配备电阻 晶体管 - SOT-666
|
||
PEMD9,115
|
NXP | 类似代替 | SOT-666 |
PEMD9 系列 50 V 100 mA NPN/PNP 配备电阻 晶体管 - SOT-666
|
||
PEMH15,115
|
Nexperia | 类似代替 | SOT-666-6 |
NXP PEMH15,115 双 NPN 数字晶体管, 100 mA, Vce=50 V, 4.7 kΩ, 电阻比:1, 6引脚 SOT-666封装
|
||
PEMH15,115
|
NXP | 类似代替 | SOT-666-6 |
NXP PEMH15,115 双 NPN 数字晶体管, 100 mA, Vce=50 V, 4.7 kΩ, 电阻比:1, 6引脚 SOT-666封装
|
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