Technical parameters/dissipated power: | 300 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 200 @1mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-666 |
|
Dimensions/Packaging: | SOT-666 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PEMD6
|
NXP | 功能相似 | SOT-563 |
PEMD6 NPN+PNP复合带阻尼三极管 50V/-50V 100mA/-100mA 200 300mW/0.3W SOT-563/SOT666 标记D6 开关电路 逆变器 接口电路 驱动电路
|
||
PEMD6,115
|
Nexperia | 类似代替 | SOT-666 |
NXP PEMD6,115 单晶体管 双极, BRT, NPN, PNP, 50 V, 300 mW, 100 mA, 200 hFE
|
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