Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 300 mW |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 60 @5mA, 5V |
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Technical parameters/rated power (Max): | 300 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-666-6 |
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Dimensions/Height: | 0.6 mm |
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Dimensions/Packaging: | SOT-666-6 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBA124EDXV6T1
|
ON Semiconductor | 功能相似 | SOT-563-6 |
SOT-563 PNP 50V 100mA
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NXP | 功能相似 | SOT-666 |
PNP电阻配备晶体管; R1 = 22 kΩ电阻， R2 = 22千欧 PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 22 kohm
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Philips | 功能相似 |
PNP电阻配备晶体管; R1 = 22 kΩ电阻， R2 = 22千欧 PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 22 kohm
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