Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-666 |
|
Dimensions/Packaging: | SOT-666 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSBA143ZDXV6T1G
|
ON Semiconductor | 功能相似 | SOT-563-6 |
双极晶体管 - 预偏置 SOT-563 DUAL 4.7/47 K OH
|
||
PEMB13,115
|
Nexperia | 类似代替 | SOT-666 |
NXP PEMB13,115 单晶体管 双极, BRT, PNP, -50 V, 180 MHz, 300 mW, -100 mA, 100 hFE
|
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