Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 300 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-563 |
|
Dimensions/Height: | 0.6 mm |
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Dimensions/Packaging: | SOT-563 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PEMB16
|
Philips | 完全替代 |
PNP / PNP电阻配备晶体管; R 1 = 22千瓦, R2 = 47千瓦 PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW
|
|||
PEMB16
|
Nexperia | 完全替代 |
PNP / PNP电阻配备晶体管; R 1 = 22千瓦, R2 = 47千瓦 PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = 47 kW
|
|||
PEMB16,115
|
Nexperia | 类似代替 | SOT-666 |
2个PNP-预偏置 100mA 50V
|
||
PEMB16,115
|
NXP | 类似代替 | SOT-563 |
2个PNP-预偏置 100mA 50V
|
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