Technical parameters/polarity: | NPN+PNP |
|
Technical parameters/dissipated power: | 0.3 W |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 80 @5mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-666 |
|
Dimensions/Height: | 0.6 mm |
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Dimensions/Packaging: | SOT-666 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PEMD12,115
|
Nexperia | 类似代替 | SOT-666-6 |
NXP PEMD12,115 单晶体管 双极, BRT, NPN, PNP, 50 V, 300 mW, 100 mA, 80 hFE
|
||
PEMD12,115
|
NXP | 类似代替 | SOT-666 |
NXP PEMD12,115 单晶体管 双极, BRT, NPN, PNP, 50 V, 300 mW, 100 mA, 80 hFE
|
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