Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @5mA, 5V |
|
Technical parameters/rated power (Max): | 300 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | SOT-666 |
|
Dimensions/Packaging: | SOT-666 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PEMB10,115
|
NXP | 功能相似 | SOT-666-6 |
晶体管 双极预偏置/数字, BRT, 双路 PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
|
||
PEMB11,115
|
Nexperia | 类似代替 | SOT-666 |
SOT-666 PNP 50V 100mA
|
||
PEMB2
|
Nexperia | 功能相似 |
PNP / PNP电阻配备晶体管; R 1 = 47千欧，R2 = 47千欧 PNP/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review