Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 35 @5mA, 5V |
|
Technical parameters/rated power (Max): | 250 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 250 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 完全替代 |
NPN电阻配备晶体管; R1 = 2.2千欧姆,R2 = 10千欧姆 NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
|
|||
|
|
Philips | 完全替代 |
NPN电阻配备晶体管; R1 = 2.2千欧姆,R2 = 10千欧姆 NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
|
|||
PDTC123YK
|
NXP | 完全替代 | MPAK |
NPN电阻配备晶体管; R1 = 2.2千欧姆,R2 = 10千欧姆 NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 10 k-ohm
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review