Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 500mA |
|
Encapsulation parameters/Encapsulation: | MPAK |
|
Dimensions/Packaging: | MPAK |
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Other/Product Lifecycle: | Unknown |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | MPAK |
低VCEsat晶体管( BISS )晶体管 Low VCEsat (BISS) transistors
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