Technical parameters/polarity: | PNP |
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Technical parameters/dissipated power: | 200 mW |
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Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 100mA |
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Technical parameters/minimum current amplification factor (hFE): | 40 @5mA, 5V |
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Technical parameters/rated power (Max): | 200 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-323-3 |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-323-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Nexperia | 类似代替 | SOT-323 |
PNP电阻配备晶体管; R 1 = 47千瓦, R2 = 10千瓦 PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW
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Philips | 类似代替 |
PNP电阻配备晶体管; R 1 = 47千瓦, R2 = 10千瓦 PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW
|
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PDTA144VU
|
NXP | 类似代替 | SOT-323 |
PNP电阻配备晶体管; R 1 = 47千瓦, R2 = 10千瓦 PNP resistor-equipped transistors; R1 = 47 kW, R2 = 10 kW
|
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PDTA144VU,115
|
NXP | 功能相似 | SOT-323-3 |
TRANS PREBIAS PNP 200mW SOT323
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