Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2PD601AQW,115
|
NXP | 功能相似 | SOT-323-3 |
UMT NPN 50V 0.1A
|
||
BCR158W
|
Infineon | 功能相似 | SOT-323 |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
|
||
MMUN2113LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2113LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率, SOT-23
|
||
PDTA123JK,115
|
NXP | 功能相似 | SOT-23-3 |
MPAK PNP 50V 100mA
|
||
|
|
Nexperia | 功能相似 | 3 |
Trans Digital BJT PNP 50V 100mA Automotive 3Pin TO-236AB
|
||
|
|
Philips | 功能相似 | SOT-23 |
Trans Digital BJT PNP 50V 100mA Automotive 3Pin TO-236AB
|
||
PDTA144ET
|
NXP | 功能相似 | SOT-23 |
Trans Digital BJT PNP 50V 100mA Automotive 3Pin TO-236AB
|
||
PDTA144ET,215
|
NXP | 完全替代 | SOT-23-3 |
NXP PDTA144ET,215 单晶体管 双极, BRT, PNP, -50 V, 180 MHz, 250 mW, 100 mA, 80 hFE
|
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