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Model PDTA143ET,215

Description NXP PDTA143ET,215 Single transistor bipolar, BRT, PNP, -50 V, 180 MHz, 250 mW, -100 mA, 30 hFE

Brand: NXP

Packaging SOT-23-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/polarity:	PNP, P-Channel
Technical parameters/dissipated power:	250 mW
Technical parameters/breakdown voltage (collector emitter):	50 V
Technical parameters/Maximum allowable collector current:	100mA
Technical parameters/minimum current amplification factor (hFE):	30 @10mA, 5V
Technical parameters/rated power (Max):	250 mW
Technical parameters/DC current gain (hFE):	30
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/gain bandwidth:	180 MHz
Technical parameters/dissipated power (Max):	250 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	SOT-23-3
Dimensions/Height:	1 mm
Dimensions/Packaging:	SOT-23-3
Physical parameters/operating temperature:	-65℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17

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