Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | DFN |
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Dimensions/Packaging: | DFN |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTA115ET,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PDTA115ET,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -20 mA, 80 hFE
|
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