Technical parameters/number of pins: | 3 |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 150 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 5V |
|
Technical parameters/rated power (Max): | 150 mW |
|
Technical parameters/DC current gain (hFE): | 100 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-416 |
|
Dimensions/Packaging: | SOT-416 |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PDTA123JE
|
NXP | 功能相似 | SOT-523 |
NPN resistor-equipped transistors; R1 = 2.2KΩ, R2 = 47KΩ
|
||
|
|
Philips | 功能相似 | SOT-416 |
NPN resistor-equipped transistors; R1 = 2.2KΩ, R2 = 47KΩ
|
||
PDTA123JE,115
|
NXP | 类似代替 | SOT-416 |
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm
|
||
PDTA123JE,115
|
Nexperia | 类似代替 | SOT-416 |
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm
|
||
PDTA123JE,115
|
XP Power | 类似代替 | Surface Mount |
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 2.2 kohm, 47 kohm
|
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