Technical parameters/polarity: | PNP |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
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Technical parameters/Maximum allowable collector current: | 20mA |
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Technical parameters/minimum current amplification factor (hFE): | 80 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SC-70 |
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Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SC-70 |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Philips | 类似代替 |
PNP电阻配备晶体管; R1 = 100千欧, R2 = 100 kΩ的 PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
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|||
|
|
NXP | 类似代替 | SC-75 |
PNP电阻配备晶体管; R1 = 100千欧, R2 = 100 kΩ的 PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ
|
||
|
|
Philips | 完全替代 |
NXP PDTA115ET 单晶体管 双极, BRT, PNP, 50 V, 250 mW, 100 mA, 80 hFE
|
|||
PDTA115ET
|
NXP | 完全替代 | SOT-23 |
NXP PDTA115ET 单晶体管 双极, BRT, PNP, 50 V, 250 mW, 100 mA, 80 hFE
|
||
PDTA115ET
|
Nexperia | 完全替代 | SOT-23 |
NXP PDTA115ET 单晶体管 双极, BRT, PNP, 50 V, 250 mW, 100 mA, 80 hFE
|
||
PDTA115ET,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PDTA115ET,215 单晶体管 双极, BRT, PNP, -50 V, 250 mW, -20 mA, 80 hFE
|
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