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Model PD20010STR-E
Description Trans RF MOSFET N-CH 40V 5A 3Pin PowerSO-10RF (Straight lead) T/R
Product QR code
Brand: ST Microelectronics
Packaging PowerSO-10RF
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
98.74  yuan 98.74yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7691) Minimum order quantity(1)
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Technical parameters/frequency:

2 GHz

 

Technical parameters/dissipated power:

59 W

 

Technical parameters/drain source voltage (Vds):

40 V

 

Technical parameters/Leakage source breakdown voltage:

40 V

 

Technical parameters/output power:

10 W

 

Technical parameters/gain:

11 dB

 

Technical parameters/test current:

150 mA

 

Technical parameters/Input capacitance (Ciss):

45pF @12.5V(Vds)

 

Technical parameters/operating temperature (Max):

165 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

59000 mW

 

Technical parameters/rated voltage:

40 V

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

PowerSO-10RF

 

Dimensions/Packaging:

PowerSO-10RF

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PD20010STR-E PD20010STR-E ST Microelectronics 完全替代 PowerSO-10RF
Trans RF MOSFET N-CH 40V 5A 3Pin PowerSO-10RF (Straight lead) T/R
PDF

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