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Model PD20015-E

Description RFPower transistor, LDMOST family RF power transistor, LdmoST family

Brand: ST Microelectronics

Packaging PowerSO-10RF

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/frequency:	2 GHz
Technical parameters/rated current:	7 A
Technical parameters/number of pins:	3
Technical parameters/dissipated power:	79 W
Technical parameters/drain source voltage (Vds):	40 V
Technical parameters/Leakage source breakdown voltage:	40 V
Technical parameters/output power:	15 W
Technical parameters/gain:	11 dB
Technical parameters/test current:	350 mA
Technical parameters/Input capacitance (Ciss):	55pF @12.5V(Vds)
Technical parameters/operating temperature (Max):	165 ℃
Technical parameters/operating temperature (Min):	-65 ℃
Technical parameters/dissipated power (Max):	79000 mW
Technical parameters/rated voltage:	40 V
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	PowerSO-10RF
Dimensions/Length:	7.5 mm
Dimensions/Width:	9.4 mm
Dimensions/Height:	3.5 mm
Dimensions/Packaging:	PowerSO-10RF
Physical parameters/operating temperature:	-65℃ ~ 165℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99