Technical parameters/rise/fall time: | 4µs, 3µs |
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Technical parameters/Input voltage (DC): | 1.20 V |
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Technical parameters/output voltage: | ≤80.0 V |
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Technical parameters/number of circuits: | 1 |
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Technical parameters/number of channels: | 1 |
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Technical parameters/forward voltage: | 1.4 V |
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Technical parameters/dissipated power: | 0.2 W |
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Technical parameters/rise time: | 18000 ns |
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Technical parameters/isolation voltage: | 5000 Vrms |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/forward current: | 50 mA |
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Technical parameters/output voltage (Max): | 80 V |
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Technical parameters/breakdown voltage: | 6 V |
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Technical parameters/forward voltage (Max): | 1.4 V |
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Technical parameters/forward current (Max): | 50 mA |
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Technical parameters/descent time: | 18000 ns |
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Technical parameters/descent time (Max): | 18 µs |
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Technical parameters/rise time (Max): | 18 µs |
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Technical parameters/operating temperature (Max): | 100 ℃ |
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Technical parameters/operating temperature (Min): | 30 ℃ |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | PDIP-4 |
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Dimensions/Length: | 4.58 mm |
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Dimensions/Width: | 6.5 mm |
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Dimensions/Height: | 3.5 mm |
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Dimensions/Packaging: | PDIP-4 |
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Physical parameters/operating temperature: | -30℃ ~ 100℃ |
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Other/Product Lifecycle: | Ob Alternative material
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