Technical parameters/rise/fall time: | 4µs, 3µs |
|
Technical parameters/Input voltage (DC): | 1.20 V |
|
Technical parameters/output voltage: | 35 V |
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Technical parameters/number of circuits: | 2 |
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Technical parameters/number of channels: | 2 |
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Technical parameters/forward voltage: | 1.2 V |
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Technical parameters/rise time: | 4.00 µs |
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Technical parameters/isolation voltage: | 5000 Vrms |
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Technical parameters/forward current: | 50 mA |
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Technical parameters/output voltage (Max): | 35 V |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | DIP-8 |
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Dimensions/Packaging: | DIP-8 |
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Physical parameters/operating temperature: | -30℃ ~ 100℃ |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ILD620
|
Siemens Semiconductor | 功能相似 |
光电耦合器，光电晶体管输出， AC输入（双通道，四通道） Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel)
|
|||
ILD620GB
|
Vishay Semiconductor | 功能相似 | DIP-8 |
光电耦合器，光电晶体管输出， AC输入（双通道，四通道） Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel)
|
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