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Model PBSS8110D
Description 100 V ，1 A NPNLow VCEsat (BISS) transistor 100V, 1A NPN low VCEsat (BISS) transistor
Product QR code
Brand: NXP
Packaging TSOP
Delivery time
Packaging method
Standard packaging quantity 1
1.14  yuan 1.14yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3107) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/Maximum allowable collector current:

1A

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TSOP

 

Dimensions/Packaging:

TSOP

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS8110D,115 PBSS8110D,115 Nexperia 类似代替 TSOP-6
TSOP NPN 100V 1A
PDF
PBSS8110D,115 PBSS8110D,115 NXP 类似代替 TSOP-6
TSOP NPN 100V 1A
PDF
PBSS8110S PBSS8110S NXP 类似代替 SPT
100 V ，1 A NPN低VCEsat晶体管（ BISS ）晶体管 100 V, 1 A NPN low VCEsat (BISS) transistor
PDF
PBSS8110X,135 PBSS8110X,135 Nexperia 类似代替 SOT-89-3
NXP PBSS8110X,135 单晶体管 双极, NPN, 100 V, 100 MHz, 2 W, 1 A, 150 hFE
PDF

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