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Model PBSS8110Y,115
Description PBSS8110Y - 100 V、1 A NPNLow VCEsat (BISS) transistor
Product QR code
Brand: NXP
Packaging TSSOP-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.36  yuan 0.36yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4485) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

290 mW

 

Technical parameters/breakdown voltage (collector emitter):

100 V

 

Technical parameters/Maximum allowable collector current:

1A

 

Technical parameters/minimum current amplification factor (hFE):

150 @250mA, 10V

 

Technical parameters/rated power (Max):

625 mW

 

Technical parameters/DC current gain (hFE):

150

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

6

 

Encapsulation parameters/Encapsulation:

TSSOP-6

 

Dimensions/Packaging:

TSSOP-6

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS8110Y PBSS8110Y NXP 完全替代 SOT-363
NXP PBSS8110Y 单晶体管 双极, 通用, NPN, 100 V, 290 mW, 1 A, 150 hFE
PDF
PBSS8110Y PBSS8110Y Nexperia 完全替代
NXP PBSS8110Y 单晶体管 双极, 通用, NPN, 100 V, 290 mW, 1 A, 150 hFE
PDF

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