Technical parameters/rated power: | 1.2 W |
|
Technical parameters/dissipated power: | 750 mW |
|
Technical parameters/gain bandwidth product: | 100 MHz |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @2A, 2V |
|
Technical parameters/rated power (Max): | 750 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 65 ℃ |
|
Technical parameters/dissipated power (Max): | 750 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 6 |
|
Encapsulation parameters/Encapsulation: | TSOP-6 |
|
Dimensions/Length: | 3.1 mm |
|
Dimensions/Width: | 1.7 mm |
|
Dimensions/Height: | 1 mm |
|
Dimensions/Packaging: | TSOP-6 |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DSS5240T-7
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Diodes | 功能相似 | SOT-23-3 |
三极管
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PBSS5350D,115
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Nexperia | 功能相似 | TSOP-457 |
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PBSS5350D,125
|
Nexperia | 功能相似 | SOT-457 |
双极晶体管 - 双极结型晶体管(BJT) Trans GP BJT PNP 50V 3A 6-Pin
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PBSS5350D,135
|
NXP | 类似代替 | SOT-457 |
PBSS5350D - 50 V,3 A PNP低VCEsat (BISS)晶体管
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||
PBSS5350D,135
|
Nexperia | 类似代替 | TSOP-6 |
PBSS5350D - 50 V,3 A PNP低VCEsat (BISS)晶体管
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