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Model PBSS5520X
Description Low saturation voltage PNP transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
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Brand: Nexperia
Packaging UPAK
Delivery time
Packaging method
Standard packaging quantity 1
1.56  yuan 1.56yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4617) Minimum order quantity(1)
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Technical parameters/minimum current amplification factor (hFE):

250

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-65 ℃

 

Technical parameters/dissipated power (Max):

2.5 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

UPAK

 

Dimensions/Length:

4.6 mm

 

Dimensions/Width:

2.6 mm

 

Dimensions/Height:

1.6 mm

 

Dimensions/Packaging:

UPAK

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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SOT-89 PNP 20V 5A
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SOT-89 PNP 20V 5A
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