Technical parameters/rated power: | 2.1 W |
|
Technical parameters/dissipated power: | 2.1 W |
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Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/minimum current amplification factor (hFE): | 140 @2A, 2V |
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Technical parameters/maximum current amplification factor (hFE): | 265 |
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Technical parameters/rated power (Max): | 2.1 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2100 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | HUSON-3 |
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Dimensions/Length: | 2.1 mm |
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Dimensions/Width: | 2.1 mm |
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Dimensions/Height: | 0.65 mm |
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Dimensions/Packaging: | HUSON-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5560PA
|
NXP | 功能相似 | SOT-1061 |
NXP PBSS5560PA 单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
|
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|
|
Nexperia | 功能相似 | HUSON-3 |
NXP PBSS5560PA 单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
|
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PBSS5580PA
|
Nexperia | 功能相似 | HUSON |
PNP 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
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