Technical parameters/frequency: | 100 MHz |
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Technical parameters/rated power: | 0.48 W |
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Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 0.48 W |
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Technical parameters/breakdown voltage (collector emitter): | 20 V |
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Technical parameters/minimum current amplification factor (hFE): | 200 @1A, 2V |
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Technical parameters/rated power (Max): | 480 mW |
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Technical parameters/DC current gain (hFE): | 225 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 480 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Industrial, consumer electronics, lighting, signal processing, motor drive and control, power management |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5320T,215
|
Nexperia | 类似代替 | SOT-23-3 |
Nexperia PBSS5320T,215 , PNP 晶体管, 2 A, Vce=20 V, HFE:100, 100 MHz, 3引脚 SOT-23 (TO-236AB)封装
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