Technical parameters/rated power: | 0.35 W |
|
Technical parameters/dissipated power: | 350 mW |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/minimum current amplification factor (hFE): | 300 @100mA, 5V |
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Technical parameters/maximum current amplification factor (hFE): | 300 @1mA, 5V |
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Technical parameters/rated power (Max): | 350 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 350 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-323-3 |
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Dimensions/Length: | 2.2 mm |
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Dimensions/Width: | 1.35 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-323-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5140T,215
|
NXP | 功能相似 | SOT-23-3 |
低饱和电压 PNP 晶体管，Nexperia 一系列 NXP BISS（小信号的重大突破）低饱和电压 PNP 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极晶体管，Nexperia
|
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PMMT591A,215
|
NXP | 功能相似 | SOT-23-3 |
Nexperia PMMT591A,215 , PNP 晶体管, 1 A, Vce=40 V, HFE:160, 150 MHz, 3引脚 SOT-23 (TO-236AB)封装
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