Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 1000 mW |
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Technical parameters/breakdown voltage (collector emitter): | 30 V |
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Technical parameters/Maximum allowable collector current: | 2A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @2A, 2V |
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Technical parameters/rated power (Max): | 325 mW |
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Technical parameters/dissipated power (Max): | 1000 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | XDFN-3 |
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Dimensions/Packaging: | XDFN-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS4230QA
|
NXP | 类似代替 | XDFN-3 |
NXP PBSS4230QA 单晶体管 双极, NPN, 30 V, 190 MHz, 325 mW, 2 A, 100 hFE
|
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