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Model PBSS4220V,115
Description PBSS4220V - 20 V、2 A NPNLow VCEsat (BISS) transistor
Product QR code
Brand: NXP
Packaging SOT-563
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.36  yuan 0.36yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8433) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/dissipated power:

900 mW

 

Technical parameters/breakdown voltage (collector emitter):

20 V

 

Technical parameters/Maximum allowable collector current:

2A

 

Technical parameters/minimum current amplification factor (hFE):

200 @1A, 2V

 

Technical parameters/maximum current amplification factor (hFE):

220 @1mA, 2V

 

Technical parameters/rated power (Max):

900 mW

 

Technical parameters/dissipated power (Max):

900 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOT-563

 

Dimensions/Packaging:

SOT-563

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBSS4220V PBSS4220V NXP 类似代替 SOT-666
20 V ，2 A NPN低VCEsat晶体管（ BISS ）晶体管 20 V, 2 A NPN low VCEsat (BISS) transistor
PDF
PBSS4220V PBSS4220V Philips 类似代替
20 V ，2 A NPN低VCEsat晶体管（ BISS ）晶体管 20 V, 2 A NPN low VCEsat (BISS) transistor
PDF
PBSS4220V,115 PBSS4220V,115 NXP 功能相似 SOT-563
TRANS NPN 20V 2A SOT666
PDF

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