Technical parameters/frequency: | 280 MHz |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 0.43 W |
|
Technical parameters/breakdown voltage (collector emitter): | 15 V |
|
Technical parameters/Maximum allowable collector current: | 0.5A |
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Technical parameters/minimum current amplification factor (hFE): | 150 @100mA, 2V |
|
Technical parameters/rated power (Max): | 430 mW |
|
Technical parameters/dissipated power (Max): | 430 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-883 |
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Dimensions/Packaging: | SOT-883 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
Nexperia | 完全替代 | 3 |
15 V , 0.5 A PNP低VCEsat晶体管( BISS )晶体管 15 V, 0.5 A PNP low VCEsat (BISS) transistor
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|
NXP | 完全替代 | SC-75 |
15 V , 0.5 A PNP低VCEsat晶体管( BISS )晶体管 15 V, 0.5 A PNP low VCEsat (BISS) transistor
|
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PBSS3515E,115
|
Nexperia | 功能相似 | SC-75 |
NXP PBSS3515E,115 单晶体管 双极, PNP, -15 V, 280 MHz, 150 mW, -500 mA, 200 hFE
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PBSS3515M
|
Nexperia | 功能相似 |
Small Signal Bipolar Transistor
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