Technical parameters/frequency: | 140 MHz |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 3A |
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Technical parameters/minimum current amplification factor (hFE): | 170 @500mA, 2V |
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Technical parameters/maximum current amplification factor (hFE): | 170 @0.5A, 2V |
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Technical parameters/rated power (Max): | 1.1 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | TSOP-457 |
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Dimensions/Packaging: | TSOP-457 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS305ND
|
Nexperia | 功能相似 | TSOP |
NPN 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
|
||
PBSS305ND
|
NXP | 功能相似 | TSOP |
NPN 晶体管，NXP 一系列 NXP BISS（小信号的重大突破）低饱和电压 NPN 双极接线晶体管。 这些设备具有极低集电极-发射极饱和电压和高集电极电流容量，采用紧凑的空间节省型封装。 这些晶体管减少损失，可在用于切换和数字应用时减少热量的产生并整体提高效率。 ### 双极性晶体管，NXP Semiconductors
|
||
PBSS305ND,115
|
NXP | 类似代替 | TSOP-457 |
NXP PBSS305ND,115 , NPN 晶体管, 3 A, Vce=100 V, HFE:25, 140 MHz, 6引脚 TSOP封装
|
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