Technical parameters/number of pins: | 4 |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 700 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 150 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/minimum current amplification factor (hFE): | 100 |
|
Technical parameters/DC current gain (hFE): | 220 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.4 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Length: | 6.7 mm |
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Dimensions/Width: | 3.7 mm |
|
Dimensions/Height: | 1.8 mm |
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Dimensions/Packaging: | SOT-223 |
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Other/Product Lifecycle: | Unknown |
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Other/Manufacturing Applications: | Lighting, Automotive, Power Management, Motor Drive & Control, Industrial |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBHV9115Z,115
|
NXP | 功能相似 | TO-261-4 |
PBHV9115Z 系列 150 V 1 A 表面贴装 PNP (BISS) 晶体管 - SOT223-3
|
||
PBHV9115Z,115
|
Nexperia | 功能相似 | TO-261-4 |
PBHV9115Z 系列 150 V 1 A 表面贴装 PNP (BISS) 晶体管 - SOT223-3
|
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