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Model PBHV9115Z
Description Low saturation voltage PNP transistors, Nexperia's series of NXP BISS (small signal breakthrough) low saturation voltage PNP bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, Nexperia
Product QR code
Brand: Nexperia
Packaging SOT-223
Delivery time
Packaging method
Standard packaging quantity 1
1.96  yuan 1.96yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6928) Minimum order quantity(1)
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Technical parameters/minimum current amplification factor (hFE):

100

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

1.4 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SOT-223

 

Dimensions/Length:

6.7 mm

 

Dimensions/Width:

3.7 mm

 

Dimensions/Height:

1.8 mm

 

Dimensions/Packaging:

SOT-223

 

Other/Product Lifecycle:

Active

 

Compliant with standards/RoHS standards:

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
PBHV9115Z,115 PBHV9115Z,115 NXP 功能相似 TO-261-4
PBHV9115Z 系列 150 V 1 A 表面贴装 PNP (BISS) 晶体管 - SOT223-3
PDF
PBHV9115Z,115 PBHV9115Z,115 Nexperia 功能相似 TO-261-4
PBHV9115Z 系列 150 V 1 A 表面贴装 PNP (BISS) 晶体管 - SOT223-3
PDF

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