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Model SPA07N65C3

Description Cool MOS Power Transistor

Brand: Infineon

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	650 V
Technical parameters/rated current:	7.30 A
Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	600 mΩ
Technical parameters/polarity:	N-CH
Technical parameters/dissipated power:	32 W
Technical parameters/Input capacitance:	790 pF
Technical parameters/gate charge:	27.0 nC
Technical parameters/drain source voltage (Vds):	650 V
Technical parameters/Leakage source breakdown voltage:	650 V
Technical parameters/Continuous drain current (Ids):	7.30 A
Technical parameters/rise time:	3.5 ns
Technical parameters/Input capacitance (Ciss):	790pF @25V(Vds)
Technical parameters/descent time:	7 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	32000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.65 mm
Dimensions/Width:	4.85 mm
Dimensions/Height:	16.15 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Product Lifecycle:	Obsolete
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free