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Model SPA03N60C3
Description INFINEON SPA03N60C3 Power Field Effect Transistor, MOSFET, N-channel, 3.2 A, 600 V, 1.26 ohm, 10 V, 3 V
Product QR code
Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
1.51  yuan 1.51yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7040) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

650 V

 

Technical parameters/rated current:

3.20 A

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

1.26 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

29.7 W

 

Technical parameters/threshold voltage:

3 V

 

Technical parameters/Input capacitance:

400 pF

 

Technical parameters/gate charge:

17.0 nC

 

Technical parameters/drain source voltage (Vds):

600 V

 

Technical parameters/Leakage source breakdown voltage:

600 V

 

Technical parameters/Continuous drain current (Ids):

3.20 A

 

Technical parameters/rise time:

3 ns

 

Technical parameters/Input capacitance (Ciss):

400pF @25V(Vds)

 

Technical parameters/rated power (Max):

29.7 W

 

Technical parameters/descent time:

12 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

29.7W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.65 mm

 

Dimensions/Width:

4.85 mm

 

Dimensions/Height:

16.15 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Method

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