Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 333 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-214AA |
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Dimensions/Packaging: | DO-214AA |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Design |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Automotive grade |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Siliconix | 完全替代 | 2 |
TRANSZORB® 瞬态电压抑制器 SMT 单向 600W,P6SMB 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB350A-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 单向 600W,P6SMB 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB350A-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 单向 600W,P6SMB 系列,Vishay Semiconductor ### 瞬态电压抑制器,Vishay Semiconductor
|
||
|
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 300V 600W 2Pin SMB T/R
|
||
P6SMB350A-M3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 300V 600W 2Pin SMB T/R
|
||
|
|
VISHAY | 完全替代 | SMB |
Diode TVS Single Uni-Dir 300V 600W 2Pin SMB T/R
|
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