Technical parameters/breakdown voltage: | 28.5 V|28.5 V |
|
Technical parameters/clamp voltage: | 41.4 V |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 25.6V |
|
Technical parameters/test current: | 1 mA |
|
Technical parameters/maximum reverse breakdown voltage: | 31.5 V |
|
Technical parameters/peak pulse power: | 600 W |
|
Technical parameters/minimum reverse breakdown voltage: | 28.5 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-214AA |
|
Dimensions/Length: | 4.57 mm |
|
Dimensions/Height: | 2.41 mm |
|
Dimensions/Packaging: | DO-214AA |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | Automotive grade |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1SMB33AT3G
|
Z-TEK | 类似代替 |
ON SEMICONDUCTOR 1SMB33AT3G TVS Diode, 1SMB Series, Unidirectional, 33 V, 53.3 V, DO-214AA, 2 Pins 新
|
|||
1SMB33AT3G
|
ON Semiconductor | 类似代替 | DO-214AA |
ON SEMICONDUCTOR 1SMB33AT3G TVS Diode, 1SMB Series, Unidirectional, 33 V, 53.3 V, DO-214AA, 2 Pins 新
|
||
|
|
LGE | 类似代替 | DO-214AA |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
||
P6SMB30CA
|
Taitron | 类似代替 |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
|||
P6SMB30CA
|
JXND | 类似代替 | SMB |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
||
P6SMB30CA
|
Littelfuse | 类似代替 | DO-214AA |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
||
|
|
FMS | 类似代替 | DO-214AA |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
||
|
|
Vishay Semiconductor | 类似代替 | DO-214AA |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
||
|
|
ETC | 类似代替 |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
|||
P6SMB30CA
|
Taiwan Semiconductor | 类似代替 | DO-214AA |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
||
P6SMB30CA
|
Bourns J.W. Miller | 类似代替 | DO-214AA |
LITTELFUSE P6SMB30CA 二极管, TVS, 双向
|
||
P6SMB30CAT3
|
ON Semiconductor | 完全替代 | DO-214AA |
600瓦峰值功率齐纳瞬态电压抑制器 600 Watt Peak Power Zener Transient Voltage Suppressors
|
||
P6SMB33AT3G
|
ON Semiconductor | 类似代替 | DO-214AA |
ON SEMICONDUCTOR P6SMB33AT3G TVS二极管, TVS, P6SMB系列, 单向, 28.2 V, 45.7 V, DO-214AA, 2 引脚
|
||
SZP6SMB30CAT3G
|
ON Semiconductor | 完全替代 | SMB |
600W 齐纳 SMT 瞬态电压抑制器,P6SMB 系列(双向) ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器,On Semiconductor
|
||
SZP6SMB30CAT3G
|
Littelfuse | 完全替代 | SMB |
600W 齐纳 SMT 瞬态电压抑制器,P6SMB 系列(双向) ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器,On Semiconductor
|
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