Technical parameters/clamp voltage: | 30.6 V |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 18.8V |
|
Technical parameters/test current: | 1 mA |
|
Technical parameters/peak pulse power: | 600 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | SMB-214 |
|
Dimensions/Packaging: | SMB-214 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZW06-58B
|
ST Microelectronics | 功能相似 | DO-15 |
TVS DIODE 58.1VWM 121VC DO15
|
||
BZW06-58B
|
EIC | 功能相似 | DO-15 |
TVS DIODE 58.1VWM 121VC DO15
|
||
BZW06-58BRL
|
ST Microelectronics | 功能相似 | DO-15 |
双向 58V
|
||
P6SMB22CAT3G
|
ON Semiconductor | 完全替代 | DO-214AA |
600W 齐纳 SMT 瞬态电压抑制器,P6SMB 系列(双向) ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器,On Semiconductor
|
||
P6SMB22CAT3G
|
Littelfuse | 完全替代 | DO-214AA-2 |
600W 齐纳 SMT 瞬态电压抑制器,P6SMB 系列(双向) ON Semiconductor SMB 系列齐纳瞬态电压抑制器设计用于保护电压敏感组件抵抗破坏性高能量瞬态电压尖脉冲。 它们具有高浪涌容量、极佳的钳位能力、低齐纳阻抗和快速响应时间。 ### 瞬态电压抑制器,On Semiconductor
|
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