Technical parameters/dissipated power: | 600 W |
|
Technical parameters/clamp voltage: | 246 V |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 180V |
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Technical parameters/test current: | 1 mA |
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Technical parameters/maximum reverse breakdown voltage: | 171 V |
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Technical parameters/peak pulse power: | 600 W |
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Technical parameters/minimum reverse breakdown voltage: | 171 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/operating temperature: | -65℃ ~ 150℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | DO-214AA |
|
Dimensions/Packaging: | DO-214AA |
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Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Minimum Packaging: | 750 |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
P6SMB180A-E3/52
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 154V 600W 2Pin SMB T/R
|
||
P6SMB180A-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 154V 600W 2Pin SMB T/R
|
||
P6SMB180AHE3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 154V 600W 2Pin SMB T/R
|
||
|
|
VISHAY | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 154V 600W 2Pin SMB T/R
|
||
P6SMB180AHE3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Uni-Dir 154V 600W 2Pin SMB T/R
|
||
P6SMB180AT3G
|
ON Semiconductor | 功能相似 | DO-214AA |
600W 齐纳表面安装瞬态电压抑制器,P6SMB 系列(双向) ### 瞬态电压抑制器,On Semiconductor
|
||
P6SMB180AT3G
|
Littelfuse | 功能相似 | DO-214AA |
600W 齐纳表面安装瞬态电压抑制器,P6SMB 系列(双向) ### 瞬态电压抑制器,On Semiconductor
|
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