Technical parameters/clamp voltage: | 14.5 V |
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Technical parameters/Maximum reverse voltage (Vrrm): | 10V |
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Technical parameters/maximum reverse breakdown voltage: | 10.5 V |
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Technical parameters/peak pulse power: | 600 W |
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Encapsulation parameters/Encapsulation: | DO-214AA-2 |
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Dimensions/Packaging: | DO-214AA-2 |
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Other/Minimum Packaging: | 750 |
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Compliant with standards/RoHS standards: | Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Intertechnology | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB10CA-E3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB10CA-E3/52
|
VISHAY | 完全替代 | DO-214AA |
TRANSZORB® 瞬态电压抑制器 SMT 双向 600W,Vishay Semiconductor 薄型 DO-214AA (SMBJ) 封装 极佳的夹持能力 非常快的响应时间 低电阻,带增量浪涌 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
P6SMB10CA-M3/52
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 8.55V 600W 2Pin SMB T/R
|
||
P6SMB10CA-M3/5B
|
Vishay Semiconductor | 完全替代 | DO-214AA |
Diode TVS Single Bi-Dir 8.55V 600W 2Pin SMB T/R
|
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