Technical parameters/number of circuits: | 1 |
|
Technical parameters/number of channels: | 1 |
|
Technical parameters/dissipated power: | 0.15 W |
|
Technical parameters/Common Mode Rejection Ratio: | 100 dB |
|
Technical parameters/input compensation drift: | 500 nV/K |
|
Technical parameters/bandwidth: | 600 kHz |
|
Technical parameters/conversion rate: | 300 mV/μs |
|
Technical parameters/gain bandwidth product: | 600 kHz |
|
Technical parameters/input compensation voltage: | 60 µV |
|
Technical parameters/input bias current: | 1.8 nA |
|
Technical parameters/operating temperature (Max): | 70 ℃ |
|
Technical parameters/operating temperature (Min): | 0 ℃ |
|
Technical parameters/gain bandwidth: | 0.6 MHz |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Length: | 4.9 mm |
|
Dimensions/Width: | 3.91 mm |
|
Dimensions/Height: | 1.58 mm |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | 0℃ ~ 70℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Rail, Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
OP07CD
|
National Semiconductor | 完全替代 |
TEXAS INSTRUMENTS OP07CD 运算放大器, 单路, 600 kHz, 1个放大器, 0.3 V/µs, ± 3V 至 ± 18V, SOIC, 8 引脚
|
|||
OP07CD
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS OP07CD 运算放大器, 单路, 600 kHz, 1个放大器, 0.3 V/µs, ± 3V 至 ± 18V, SOIC, 8 引脚
|
||
OP07CDR
|
TI | 完全替代 | SOIC-8 |
TEXAS INSTRUMENTS OP07CDR 芯片, 运算放大器, 600KHZ, 0.3V/uS, SOIC-8
|
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