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Model NTTS2P03R2

Description Power MOSFET -2.48 ampere, voltage-30 P-channel enhancement mode single Micro8 package Power MOSFET -2.48 Amps, -30 Volts P−Channel Enhancement Mode Single Micro8 Package

Brand: ON Semiconductor

Packaging TSSOP-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(3132) Minimum order quantity(1)

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Technical parameters/rated voltage (DC):	-30.0 V
Technical parameters/rated current:	-2.48 A
Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	85 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	780 mW
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30 V
Technical parameters/breakdown voltage of gate source:	±20.0 V
Technical parameters/Continuous drain current (Ids):	2.48 A
Technical parameters/rise time:	20.0 ns
Technical parameters/Input capacitance (Ciss):	500pF @24V(Vds)
Technical parameters/rated power (Max):	600 mW
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	600mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	TSSOP-8
Dimensions/Length:	3 mm
Dimensions/Width:	3 mm
Dimensions/Height:	0.95 mm
Dimensions/Packaging:	TSSOP-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Contains Lead