Technical parameters/rated voltage (DC): | -20.0 V |
|
Technical parameters/rated current: | -1.37 A |
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Technical parameters/drain source resistance: | 104 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 329 mW |
|
Technical parameters/Input capacitance: | 840 pF |
|
Technical parameters/gate charge: | 9.00 nC |
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Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/breakdown voltage of gate source: | ±8.00 V |
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Technical parameters/Continuous drain current (Ids): | 1.37 A |
|
Technical parameters/rise time: | 14.9 ns |
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Technical parameters/Input capacitance (Ciss): | 840pF @20V(Vds) |
|
Technical parameters/rated power (Max): | 329 mW |
|
Technical parameters/descent time: | 14.9 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 329mW (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SC-70-3 |
|
Dimensions/Length: | 2.1 mm |
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Dimensions/Width: | 1.24 mm |
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Dimensions/Height: | 0.85 mm |
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Dimensions/Packaging: | SC-70-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF2202PT1
|
ON Semiconductor | 类似代替 | SC-70-3 |
功率MOSFET 300毫安, 20伏P沟道SC- 70 / SOT- 323 Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323
|
||
MMBF2202PT1
|
Motorola | 类似代替 |
功率MOSFET 300毫安, 20伏P沟道SC- 70 / SOT- 323 Power MOSFET 300 mAmps, 20 Volts P−Channel SC−70/SOT−323
|
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