Technical parameters/rated voltage (DC): | 20.0 V |
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Technical parameters/rated current: | 3.20 A |
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Technical parameters/drain source resistance: | 85.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/Input capacitance: | 200 pF |
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Technical parameters/gate charge: | 6.00 nC |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | 3.20 A |
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Technical parameters/Input capacitance (Ciss): | 200pF @10V(Vds) |
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Technical parameters/dissipated power (Max): | 1.25 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTR4501NT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR NTR4501NT1G 晶体管, MOSFET, N沟道, 3.2 A, 20 V, 80 mohm, 4.5 V, 1.2 V
|
||
|
|
TY Semiconductor | 类似代替 |
功率MOSFET的20 V ， 3.2 A单N沟道， SOT -23 Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
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|
|
TY Semiconductor | 完全替代 |
3.2A,20V,N沟道MOSFET
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