Technical parameters/rated voltage (DC): | -30.0 V |
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Technical parameters/rated current: | -1.95 A |
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Technical parameters/drain source resistance: | 240 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 0.4 W |
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Technical parameters/Input capacitance: | 200 pF |
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Technical parameters/gate charge: | 10.0 nC |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 1.95 A, -1.95 A |
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Technical parameters/rise time: | 12 ns |
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Technical parameters/Input capacitance (Ciss): | 200pF @15V(Vds) |
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Technical parameters/descent time: | 17.5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 400 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTR4502PT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR NTR4502PT1G 晶体管, MOSFET, P沟道, 1.95 A, -30 V, 200 mohm, -10 V, -3 V
|
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