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Model NTQD6866R2G
Description 6.9A,20VPower MOSFET
Product QR code
Brand: ON Semiconductor
Packaging TSSOP-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.45  yuan 1.45yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5110) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

20.0 V

 

Technical parameters/rated current:

6.90 A

 

Technical parameters/drain source resistance:

30.0 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2 W

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20.0 V

 

Technical parameters/breakdown voltage of gate source:

±12.0 V

 

Technical parameters/Continuous drain current (Ids):

4.30 A

 

Technical parameters/rise time:

45 ns

 

Technical parameters/Input capacitance (Ciss):

1400pF @16V(Vds)

 

Technical parameters/rated power (Max):

940 mW

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

TSSOP-8

 

Dimensions/Length:

3.1 mm

 

Dimensions/Width:

4.5 mm

 

Dimensions/Height:

0.95 mm

 

Dimensions/Packaging:

TSSOP-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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