Technical parameters/rated voltage (DC): | 25.0 V |
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Technical parameters/rated current: | 1.00 A |
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Technical parameters/drain source resistance: | 299 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 630mW (Ta) |
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Technical parameters/Input capacitance: | 60.0 pF |
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Technical parameters/gate charge: | 1.50 nC |
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Technical parameters/drain source voltage (Vds): | 25 V |
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Technical parameters/Leakage source breakdown voltage: | 25.0 V |
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Technical parameters/breakdown voltage of gate source: | ±8.00 V |
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Technical parameters/Continuous drain current (Ids): | 1.20 A |
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Technical parameters/Input capacitance (Ciss): | 60pF @10V(Vds) |
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Technical parameters/rated power (Max): | 630 mW |
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Technical parameters/dissipated power (Max): | 630mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-363 |
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Dimensions/Packaging: | SOT-363 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTJS4405NT4
|
ON Semiconductor | 功能相似 | SC-88-6 |
小信号MOSFET的25 V ， 1.2 A单N通道， SC- 88 Small Signal MOSFET 25 V, 1.2 A, Single, N−Channel, SC−88
|
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