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Model NTGD1100LT1
Description Power MOSFET 8 V? 0.3 A， Equipped with level conversion, P-channel load switch, TSOP -6 Power MOSFET 8 V? .3 A, Load Switch with Level−Shift, P−Channel, TSOP−6
Product QR code
Brand: ON Semiconductor
Packaging TSOT-23-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.3  yuan 1.3yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3029) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

20.0 V

 

Technical parameters/rated current:

3.30 A

 

Technical parameters/number of output interfaces:

1

 

Technical parameters/drain source resistance:

80.0 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

830 mW

 

Technical parameters/drain source voltage (Vds):

8 V

 

Technical parameters/Leakage source breakdown voltage:

8.00 V

 

Technical parameters/breakdown voltage of gate source:

1.20 V

 

Technical parameters/Continuous drain current (Ids):

-3.30 A to 3.30 A

 

Technical parameters/output current (Max):

3.3 A

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TSOT-23-6

 

Dimensions/Packaging:

TSOT-23-6

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTGD1100LT1G NTGD1100LT1G ON Semiconductor 类似代替 TSOT-23-6
N/P 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
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