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Model NTHD4502NT1
Description 30 V, 3.9 A, Dual N-channel ChipFET Power MOSFET 30 V, 3.9 A, Dual N-channel ChipFET
Product QR code
Brand: ON Semiconductor
Packaging SMD-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.02  yuan 1.02yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2591) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

3.90 A

 

Technical parameters/drain source resistance:

200 mΩ

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.13 W

 

Technical parameters/Input capacitance:

140 pF

 

Technical parameters/gate charge:

7.00 nC

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

2.90 A

 

Technical parameters/Input capacitance (Ciss):

140pF @15V(Vds)

 

Technical parameters/rated power (Max):

640 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SMD-8

 

Dimensions/Packaging:

SMD-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTHD4502NT1G NTHD4502NT1G ON Semiconductor 类似代替 SMD-8
N 通道 MOSFET，ON Semiconductor ### MOSFET 晶体管，ON Semiconductor
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