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Model NTHD3100CT3
Description Power MOSFET 20 V, 3.9 A/-4.4 A, Complementary ChipFET Power MOSFET 20 V,+3.9 A/-4.4 A, Complementary ChipFET
Product QR code
Brand: ON Semiconductor
Packaging SMD-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3871) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

20.0 V

 

Technical parameters/rated current:

3.90 A

 

Technical parameters/number of channels:

2

 

Technical parameters/drain source resistance:

77.0 mΩ, 85.0 mΩ

 

Technical parameters/polarity:

N-Channel, P-Channel

 

Technical parameters/dissipated power:

1.1 W

 

Technical parameters/Input capacitance:

165 pF

 

Technical parameters/gate charge:

2.30 nC

 

Technical parameters/drain source voltage (Vds):

20 V

 

Technical parameters/Leakage source breakdown voltage:

20 V

 

Technical parameters/Continuous drain current (Ids):

3.20 A

 

Technical parameters/Input capacitance (Ciss):

165pF @10V(Vds)

 

Technical parameters/rated power (Max):

1.1 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

SMD-8

 

Dimensions/Packaging:

SMD-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTHD3100CT1G NTHD3100CT1G ON Semiconductor 类似代替 SMD-8
ON SEMICONDUCTOR NTHD3100CT1G. 场效应管, MOSFET, 双P沟道, -20V, 1206A, 整卷
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